Dynamic Voltage-Dependent Modeling of Single Event Transients in CMOS Ring Oscillators

This article introduces a novel dynamic voltage-dependent (DVD) model for simulating single-event transients (SETs) in complementary metal-oxide-semiconductor (CMOS) circuits. This model overcomes the limitations of voltage-independent and static voltage-dependent SET models, offering improved accur...

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Vydané v:	IEEE transactions on nuclear science Ročník 72; číslo 6; s. 1897 - 1906
Hlavní autori:	Kampati, Venkata Sathyajith, Bonaldo, Stefano, Leroux, Paul, Prinzie, Jeffrey
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.06.2025 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Accuracy CAD Calibration Circuits CMOS Complementary metal-oxide-semiconductor (CMOS) Computer aided design Current pulses Electric potential Energy transfer impulse sensitivity function (ISF) Integrated circuit modeling Integrated circuits Linear energy transfer (LET) Mathematical models Modelling Optical disks Oscillators Radiation hardening Scalability Semiconductor device modeling Sensitivity Simulation Program with Integrated Circuit Emphasis (SPICE) single event phase transients (SEPTs) single-event upset (SEU) technology computer aided design (TCAD) Transient analysis Voltage
ISSN:	0018-9499, 1558-1578
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