Dynamic Voltage-Dependent Modeling of Single Event Transients in CMOS Ring Oscillators

This article introduces a novel dynamic voltage-dependent (DVD) model for simulating single-event transients (SETs) in complementary metal-oxide-semiconductor (CMOS) circuits. This model overcomes the limitations of voltage-independent and static voltage-dependent SET models, offering improved accur...

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Vydané v:IEEE transactions on nuclear science Ročník 72; číslo 6; s. 1897 - 1906
Hlavní autori: Kampati, Venkata Sathyajith, Bonaldo, Stefano, Leroux, Paul, Prinzie, Jeffrey
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: New York IEEE 01.06.2025
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:
Accuracy
CAD
Calibration
Circuits
CMOS
Complementary metal-oxide-semiconductor (CMOS)
Computer aided design
Current pulses
Electric potential
Energy transfer
impulse sensitivity function (ISF)
Integrated circuit modeling
Integrated circuits
Linear energy transfer (LET)
Mathematical models
Modelling
Optical disks
Oscillators
Radiation hardening
Scalability
Semiconductor device modeling
Sensitivity
Simulation Program with Integrated Circuit Emphasis (SPICE)
single event phase transients (SEPTs)
single-event upset (SEU)
technology computer aided design (TCAD)
Transient analysis
Voltage
ISSN:0018-9499, 1558-1578
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Popis
Shrnutí:This article introduces a novel dynamic voltage-dependent (DVD) model for simulating single-event transients (SETs) in complementary metal-oxide-semiconductor (CMOS) circuits. This model overcomes the limitations of voltage-independent and static voltage-dependent SET models, offering improved accuracy and scalability for a linear energy transfer (LET) of up to 100 MeV<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula>cm2/mg. The model, integrated into the Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, precisely captures the relationship between SET-induced current pulses and node voltage, allowing to enhance the performance of large signal RF circuits for radiation-sensitive applications. Validations through technology computer aided design (TCAD) simulations show a close agreement, providing valuable insights into SET effects on oscillators. This advancement in SET modeling is a critical tool for designing high-speed radiation-hardened circuits.
Bibliografia:ObjectType-Article-1
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content type line 14
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2025.3564513