A Template-Assisted Photolithography Strategy for High-Density Halide Perovskite RRAM Crossbar Arrays With Ultralow Operating Voltages

Halide perovskite resistive random access memory (RRAM) has been extensively investigated due to its tremendous potential in nonvolatile memory and neuromorphic computing technologies. However, halide perovskite RRAM crossbar arrays fabricated by semiconductor techniques were scarcely reported due t...

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Vydáno v:	IEEE transactions on electron devices Ročník 72; číslo 8; s. 4077 - 4082
Hlavní autoři:	Kang, Kaijin, Niu, Wen, Pan, Jiayi, Wang, Yi, Wang, Youhong, Dong, Caili, Chen, Weiwei, He, Yong, Tang, Xiaosheng, Hu, Wei
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York IEEE 01.08.2025 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Accuracy Arrays Bias Computer architecture Crossbar arrays Electrodes halide perovskite High density Lithography low power consumption Microprocessors Performance evaluation Perovskites Photolithography Polystyrene resins Random access memory resistive switching memory Resists Scanning electron microscopy Substrates Switches
ISSN:	0018-9383, 1557-9646
On-line přístup:	Získat plný text
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