A Template-Assisted Photolithography Strategy for High-Density Halide Perovskite RRAM Crossbar Arrays With Ultralow Operating Voltages

Halide perovskite resistive random access memory (RRAM) has been extensively investigated due to its tremendous potential in nonvolatile memory and neuromorphic computing technologies. However, halide perovskite RRAM crossbar arrays fabricated by semiconductor techniques were scarcely reported due t...

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Published in:IEEE transactions on electron devices Vol. 72; no. 8; pp. 4077 - 4082
Main Authors: Kang, Kaijin, Niu, Wen, Pan, Jiayi, Wang, Yi, Wang, Youhong, Dong, Caili, Chen, Weiwei, He, Yong, Tang, Xiaosheng, Hu, Wei
Format: Journal Article
Language:English
Published: New York IEEE 01.08.2025
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Accuracy
Arrays
Bias
Computer architecture
Crossbar arrays
Electrodes
halide perovskite
High density
Lithography
low power consumption
Microprocessors
Performance evaluation
Perovskites
Photolithography
Polystyrene resins
Random access memory
resistive switching memory
Resists
Scanning electron microscopy
Substrates
Switches
ISSN:0018-9383, 1557-9646
Online Access:Get full text
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Summary:Halide perovskite resistive random access memory (RRAM) has been extensively investigated due to its tremendous potential in nonvolatile memory and neuromorphic computing technologies. However, halide perovskite RRAM crossbar arrays fabricated by semiconductor techniques were scarcely reported due to the challenges of making halide perovskite compatible with a common photolithography processing. Herein, Cs2AgBiBr6-based RRAM crossbar arrays with a minimum cell area of <inline-formula> <tex-math notation="LaTeX">5\times 5~\mu </tex-math></inline-formula>m2 were fabricated using polystyrene as a template for photolithography processing. The cells within the crossbar arrays exhibit bipolar resistive switching behaviors with ultralow operating voltages (<0.12 V) and power consumption (<inline-formula> <tex-math notation="LaTeX">\lt 1.44\times 10^{-8} </tex-math></inline-formula> W/switching). In addition, the programming accuracy rates based on the 1/2 bias scheme and 1/3 bias scheme were studied by simulation in MATLAB based on the statistics data. The results suggest that the uniformity of device performance is crucial for one-RRAM (1R) crossbar arrays. A suitable bias scheme and supply voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {dd}} </tex-math></inline-formula>) could increase the programming accuracy rate. This work provides a feasible technique to fabricate high-density halide perovskite RRAM crossbar arrays.
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2025.3580491