A Silicon-Based D-Band Miniaturized Diplexer Using Perturbed Dual-Mode Junction-Cavity

A D-band silicon-based diplexer is proposed using metallized rectangular waveguide cavities (MRWCs). Perturbed dual-mode junction-cavity is achieved as the connection network to form the lower and upper channels. The synthesized, simulated, and measured S-parameters of the diplexer show a good agree...

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Vydané v:	IEEE transactions on microwave theory and techniques Ročník 73; číslo 9; s. 5918 - 5928
Hlavní autori:	Zhang, Zi-Qi, Zhou, Liang, Zhang, Cheng-Rui, Zhou, Kang
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.09.2025 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Bandwidth Bandwidths Channels Communications systems Couplings D-band Diplexers Electric fields Fabrication Holes Insertion loss Loss measurement low loss metallized rectangular waveguide cavity (MRWC) Metallizing miniaturization Passband perturbed dual-mode junction-cavity Radio frequency Rectangular waveguides Silicon silicon-based diplexer Topology
ISSN:	0018-9480, 1557-9670
On-line prístup:	Získať plný text
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