Fabrication of a solution-processed IGZO/NiO p-n diode

The fabrication of a p-n diode is investigated using a fully solution-processed method. Indium Gallium Zinc Oxide (IGZO) ink was synthesized and deposited on a quartz substrate and annealed to form a thin film serving as an n-type semiconductor. A facile sol-gel method was used to deposit a lithium...

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Veröffentlicht in:	Scientia Iranica. Transaction D, Computer science & engineering, electrical engineering Jg. 31; H. 21; S. 1963 - 1970
Hauptverfasser:	Arjmandi, Nima, Seraj, Mohammad
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Tehran Sharif University of Technology 01.11.2024
Schlagworte:	Acids Annealing Carrier density Chloride Cost control Diodes Fabrication Gallium Hexagons Indium Indium gallium zinc oxide Lithium Mobility Morphology N-type semiconductors Nickel Nickel oxides P-type semiconductors Pore size Scanning electron microscopy Silver Sol-gel processes Solvents Substrates Thin films X-ray diffraction Zinc oxide Zinc oxides
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