Promoting photocarriers separation in distinctive ternary g-C3N4/Ni2P/ZnO composite with Ni2P electron-bridge

Constructing a Z-type heterojunction is a key factor in reducing interface resistance for accelerating the separationand transfer of photogenerated carriers. Therefore, we built a novel g-C3N4/Ni2P/ZnO composite whichform Z-type heterojunction between g-C3N4 and ZnO employing Ni2P as an electron bri...

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Bibliographic Details

Published in:	Journal of industrial and engineering chemistry (Seoul, Korea) Vol. 135; pp. 334 - 343
Main Authors:	Wei, Wei, Bian, Haiqin, Zhang, XuMing, OuYang, ZhengYu, Zhang, Zhengmei, Wang, Tao
Format:	Journal Article
Language:	English
Published:	한국공업화학회 01.07.2024
Subjects:	화학공학
ISSN:	1226-086X, 1876-794X
Online Access:	Get full text
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