Promoting photocarriers separation in distinctive ternary g-C3N4/Ni2P/ZnO composite with Ni2P electron-bridge

Constructing a Z-type heterojunction is a key factor in reducing interface resistance for accelerating the separationand transfer of photogenerated carriers. Therefore, we built a novel g-C3N4/Ni2P/ZnO composite whichform Z-type heterojunction between g-C3N4 and ZnO employing Ni2P as an electron bri...

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Vydané v:	Journal of industrial and engineering chemistry (Seoul, Korea) Ročník 135; s. 334 - 343
Hlavní autori:	Wei, Wei, Bian, Haiqin, Zhang, XuMing, OuYang, ZhengYu, Zhang, Zhengmei, Wang, Tao
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	한국공업화학회 01.07.2024
Predmet:	화학공학
ISSN:	1226-086X, 1876-794X
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