Preparation of 2D AlxGa1-xN film via printing liquid metals

•The process for facilely preparing 2D AlxGa1-xN is proposed.•Liquid Ga99.5Al0.5 printing technique and post nitriding treatment are employed.•The 2D AlxGa1-xN has good crystallinity and a ultra-wide bandgap of 5.55 eV.•The 2D AlxGa1-xN is n-type semiconductor and can be used in filed effect transis...

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Vydáno v:Materials letters Ročník 375; s. 137259
Hlavní autoři: Song, Tieling, Zhang, Weian, Cui, Haichao, Xia, Chengxi, Du, Bangdeng, Liu, Jing
Médium: Journal Article
Jazyk:angličtina
Vydáno: Elsevier B.V 15.11.2024
Témata:
Electronic materials
Epitaxial growth
Thin films
Thin films
Electronic materials
Epitaxial growth
ISSN:0167-577X
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Shrnutí:•The process for facilely preparing 2D AlxGa1-xN is proposed.•Liquid Ga99.5Al0.5 printing technique and post nitriding treatment are employed.•The 2D AlxGa1-xN has good crystallinity and a ultra-wide bandgap of 5.55 eV.•The 2D AlxGa1-xN is n-type semiconductor and can be used in filed effect transistor. AlGaN film is a promising barrier layer widely used in high electron mobility transistor. Facile preparation of 2D AlGaN with high quality is still a challenge for traditional process. In this work, high quality 2D AlxGa1-xN (mixture of AlN and GaN) is synthesized by using liquid alloy printing technique and post nitriding treatment. The prepared 2D AlxGa1-xN shows good crystallinity and ultra-wide bandgap of 5.55 eV. Besides, the 2D AlxGa1-xN is a n-type semiconductor and can act as channel layer in field effect transistor. This novel process provides a facile way to obtain 2D AlxGa1-xN film, which will have a potential application in AlGaN/GaN heterostructure field effect transistors.
ISSN:0167-577X
DOI:10.1016/j.matlet.2024.137259