AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 43; no. 4; pp. 537 - 543
Main Authors:	Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.
Format:	Journal Article
Language:	English
Published:	01.04.2009
ISSN:	1063-7826, 1090-6479
Online Access:	Get full text
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ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782609040253