First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs

A device model of silicon carbide (SiC) p- and n-channel junction field-effect transistors (JFETs) applicable in a high-temperature range was constructed, and the validity of the model was evaluated in Simulation Program with Integrated Circuit Emphasis (SPICE) simulations. The constructed device mo...

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Vydané v:	APL Electronic Devices Ročník 1; číslo 2
Hlavní autori:	Maeda, Noriyuki, Kaneko, Mitsuaki, Tanaka, Hajime, Kimoto, Tsunenobu
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	01.06.2025
ISSN:	2995-8423, 2995-8423
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