60‐2: NanoLEDs for Augmented Reality Applications

Nanowire‐based InGaN light‐emitting diodes (nanoLEDs) have progressed to being the most efficient LEDs ever made at extremely small lateral sizes, and have the added benefits of highly directional emission and extremely narrow bandwidth. Augmented reality headsets and other A/R display applications...

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Vydáno v:SID International Symposium Digest of technical papers Ročník 55; číslo 1; s. 823 - 825
Hlavní autoři: Coe-Sullivan, S., Stevenson, Matthew, Le, Binh H., Laleyan, David
Médium: Journal Article
Jazyk:angličtina
Vydáno: Campbell Wiley Subscription Services, Inc 01.06.2024
Témata:
Augmented reality
InGaN
Light emitting diodes
microLED
nanoLED
nanowire
Nanowires
ISSN:0097-966X, 2168-0159
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Shrnutí:Nanowire‐based InGaN light‐emitting diodes (nanoLEDs) have progressed to being the most efficient LEDs ever made at extremely small lateral sizes, and have the added benefits of highly directional emission and extremely narrow bandwidth. Augmented reality headsets and other A/R display applications will require displays that combine these properties with low‐cost and high yield manufacturing.
Bibliografie:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17656