A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically...

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Veröffentlicht in:	Nano letters Jg. 12; H. 1; S. 389 - 395
Hauptverfasser:	Kim, Kuk-Hwan, Gaba, Siddharth, Wheeler, Dana, Cruz-Albrecht, Jose M, Hussain, Tahir, Srinivasa, Narayan, Lu, Wei
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Washington, DC American Chemical Society 11.01.2012
Schlagworte:	Applied sciences Arrays Binary systems (materials) CMOS Computer Storage Devices Data storage Electric Impedance Electronics Equipment Design Equipment Failure Analysis Exact sciences and technology Information Storage and Retrieval Memory devices Molecular electronics, nanoelectronics Multilevel Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - instrumentation Particle Size Programming Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Stores Systems Integration hybrid integration Memristor resistive memory (RRAM) crossbar neuromorphic system multilevel Array Diode High density Memory Data storage Transistor Chip
ISSN:	1530-6984, 1530-6992, 1530-6992
Online-Zugang:	Volltext
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