A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically...

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Vydáno v:	Nano letters Ročník 12; číslo 1; s. 389 - 395
Hlavní autoři:	Kim, Kuk-Hwan, Gaba, Siddharth, Wheeler, Dana, Cruz-Albrecht, Jose M, Hussain, Tahir, Srinivasa, Narayan, Lu, Wei
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Washington, DC American Chemical Society 11.01.2012
Témata:	Applied sciences Arrays Binary systems (materials) CMOS Computer Storage Devices Data storage Electric Impedance Electronics Equipment Design Equipment Failure Analysis Exact sciences and technology Information Storage and Retrieval Memory devices Molecular electronics, nanoelectronics Multilevel Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - instrumentation Particle Size Programming Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Stores Systems Integration hybrid integration Memristor resistive memory (RRAM) crossbar neuromorphic system multilevel Array Diode High density Memory Data storage Transistor Chip
ISSN:	1530-6984, 1530-6992, 1530-6992
On-line přístup:	Získat plný text
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!

Abstract	Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.
AbstractList	Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme. Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.
Author	Srinivasa, Narayan Cruz-Albrecht, Jose M Lu, Wei Gaba, Siddharth Wheeler, Dana Kim, Kuk-Hwan Hussain, Tahir
AuthorAffiliation	HRL Laboratories LLC The University of Michigan
AuthorAffiliation_xml	– name: The University of Michigan – name: HRL Laboratories LLC
Author_xml	– sequence: 1 givenname: Kuk-Hwan surname: Kim fullname: Kim, Kuk-Hwan – sequence: 2 givenname: Siddharth surname: Gaba fullname: Gaba, Siddharth – sequence: 3 givenname: Dana surname: Wheeler fullname: Wheeler, Dana – sequence: 4 givenname: Jose M surname: Cruz-Albrecht fullname: Cruz-Albrecht, Jose M – sequence: 5 givenname: Tahir surname: Hussain fullname: Hussain, Tahir – sequence: 6 givenname: Narayan surname: Srinivasa fullname: Srinivasa, Narayan – sequence: 7 givenname: Wei surname: Lu fullname: Lu, Wei email: wluee@eecs.umich.edu
BackLink	http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25476184$$DView record in Pascal Francis https://www.ncbi.nlm.nih.gov/pubmed/22141918$$D View this record in MEDLINE/PubMed
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Snippet	Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we...
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SubjectTerms	Applied sciences Arrays Binary systems (materials) CMOS Computer Storage Devices Data storage Electric Impedance Electronics Equipment Design Equipment Failure Analysis Exact sciences and technology Information Storage and Retrieval Memory devices Molecular electronics, nanoelectronics Multilevel Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - instrumentation Particle Size Programming Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Stores Systems Integration
Title	A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
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