Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted models explain the resistive switching in these devices through the presence/absence of a conductive filament (CF) that is described as a revers...

Celý popis

Podrobná bibliografie

Vydáno v:	Nano letters Ročník 15; číslo 12; s. 7970 - 7975
Hlavní autoři:	Celano, Umberto, Goux, Ludovic, Degraeve, Robin, Fantini, Andrea, Richard, Olivier, Bender, Hugo, Jurczak, Malgorzata, Vandervorst, Wilfried
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	United States American Chemical Society 09.12.2015
Témata:	scalpel SPM resistive random access memory (RRAM) resistive switching Conductive filament C-AFM tomography
ISSN:	1530-6984, 1530-6992
On-line přístup:	Získat plný text
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!