Dynamic reliability management for near-threshold dark silicon processors

In this article, we propose a new dynamic reliability management (DRM) techniques at the system level for emerging low power dark silicon manycore microprocessors operating in near-threshold region. We mainly consider the electromigration (EM) failures. To leverage the EM recovery effects, which was...

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Bibliographic Details

Published in:	Digest of technical papers - IEEE/ACM International Conference on Computer-Aided Design pp. 1 - 7
Main Authors:	Taeyoung Kim, Zeyu Sun, Cook, Chase, Gaddipati, Jagadeesh, Hai Wang, Haibao Chen, Tan, Sheldon X.-D
Format:	Conference Proceeding
Language:	English
Published:	ACM 01.11.2016
Subjects:	Computational modeling Current density Mathematical model Reliability Silicon Stress Wires
ISSN:	1558-2434
Online Access:	Get full text
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