Exploiting ferroelectric FETs for low-power non-volatile logic-in-memory circuits

Numerous research efforts are targeting new devices that could continue performance scaling trends associated with Moore's Law and/or accomplish computational tasks with less energy. One such device is the ferroelectric FET (FeFET), which offers the potential to be scaled beyond the end of the...

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Vydané v:	Digest of technical papers - IEEE/ACM International Conference on Computer-Aided Design s. 1 - 8
Hlavní autori:	Xunzhao Yin, Aziz, Ahmedullah, Nahas, Joseph, Datta, Suman, Gupta, Sumeet, Niemier, Michael, Xiaobo Sharon Hu
Médium:	Konferenčný príspevok..
Jazyk:	English
Vydavateľské údaje:	ACM 01.11.2016
Predmet:	Capacitance Hysteresis Iron Magnetic tunneling Mathematical model MOSFET
ISSN:	1558-2434
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