On mask layout partitioning for electron projection lithography
Electron projection lithography (EPL) is a leading candidate for next generation lithography (NGL) in VLSI production. The membrane mask used in EPL is divided into sub-fields by struts for structural support. A layout must be partitioned into these sub-fields on mask and then stitched back together...
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| Veröffentlicht in: | Digest of technical papers - IEEE/ACM International Conference on Computer-Aided Design S. 514 - 518 |
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| Hauptverfasser: | , , , |
| Format: | Tagungsbericht |
| Sprache: | Englisch |
| Veröffentlicht: |
New York, NY, USA
ACM
10.11.2002
IEEE |
| Schriftenreihe: | ACM Conferences |
| Schlagworte: | |
| ISBN: | 0780376072, 9780780376076 |
| ISSN: | 1092-3152 |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Electron projection lithography (EPL) is a leading candidate for next generation lithography (NGL) in VLSI production. The membrane mask used in EPL is divided into sub-fields by struts for structural support. A layout must be partitioned into these sub-fields on mask and then stitched back together by the EPL tool on wafer. To minimize possible stitching errors, partitioning of a mask layout should minimize cuts of layout features in the overlapping area between two adjacent sub-fields. This paper presents the first formulation of the mask layout partitioning problem for EPL as a graph problem. The graph formulation is optimally solved with a shortest path approach. Two other techniques are also presented to speed up computation. Experimental runs on data from a real industry design show excellent results. |
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| Bibliographie: | SourceType-Conference Papers & Proceedings-1 ObjectType-Conference Paper-1 content type line 25 |
| ISBN: | 0780376072 9780780376076 |
| ISSN: | 1092-3152 |
| DOI: | 10.1145/774572.774648 |

