Simulation-based reusable posynomial models for MOS transistor parameters

We present an algorithm to automatically design posynomial models for parameters of the MOS transistors using simulation data. These models improve the accuracy of the Geometric Programming flow for automatic circuit sizing. The models are reusable for multiple circuits on a given Silicon technology...

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Vydané v:	Proceedings of the conference on Design, automation and test in Europe s. 69 - 74
Hlavní autori:	Aggarwal, Varun, O'Reilly, Una-May
Médium:	Konferenčný príspevok..
Jazyk:	English
Vydavateľské údaje:	San Jose, CA, USA EDA Consortium 16.04.2007
Edícia:	ACM Conferences
Predmet:	Information systems Information systems > Data management systems Information systems > Data management systems > Database administration Information systems > Data management systems > Database administration > Data dictionaries Theory of computation Theory of computation > Design and analysis of algorithms Theory of computation > Design and analysis of algorithms > Mathematical optimization
ISBN:	3981080122, 9783981080124
On-line prístup:	Získať plný text
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