Simulation-based reusable posynomial models for MOS transistor parameters

We present an algorithm to automatically design posynomial models for parameters of the MOS transistors using simulation data. These models improve the accuracy of the Geometric Programming flow for automatic circuit sizing. The models are reusable for multiple circuits on a given Silicon technology...

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Vydané v:Proceedings of the conference on Design, automation and test in Europe s. 69 - 74
Hlavní autori: Aggarwal, Varun, O'Reilly, Una-May
Médium: Konferenčný príspevok..
Jazyk:English
Vydavateľské údaje: San Jose, CA, USA EDA Consortium 16.04.2007
Edícia:ACM Conferences
Predmet:
Information systems
Information systems > Data management systems
Information systems > Data management systems > Database administration
Information systems > Data management systems > Database administration > Data dictionaries
Theory of computation
Theory of computation > Design and analysis of algorithms
Theory of computation > Design and analysis of algorithms > Mathematical optimization
ISBN:3981080122, 9783981080124
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Popis
Shrnutí:We present an algorithm to automatically design posynomial models for parameters of the MOS transistors using simulation data. These models improve the accuracy of the Geometric Programming flow for automatic circuit sizing. The models are reusable for multiple circuits on a given Silicon technology and hence don't adversely affect the scalability of the Geometric Programming approach. The proposed method is a combination of genetic algorithms and Quadratic Programming. It is the only approach for posynomial modeling with real-valued exponents which is easily extensible to different error metrics. We compare the proposed technique with state-of-art posynomial/monomial modeling techniques and show its superiority.
ISBN:3981080122
9783981080124
DOI:10.5555/1266366.1266384