Steep switching tunnel FET a promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications

Steep switching Tunnel FETs (TFET) can extend the supply voltage scaling with improved energy efficiency for both digital and analog/RF application. In this paper, recent approaches on III-V Tunnel FET device design, prototype device demonstration, modeling techniques and performance evaluations for...

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Bibliographic Details
Published in:	Proceedings of the 2013 International Symposium on Low Power Electronics and Design pp. 145 - 150
Main Authors:	Liu, Huichu, Datta, Suman, Narayanan, Vijaykrishnan
Format:	Conference Proceeding
Language:	English
Published:	Piscataway, NJ, USA IEEE Press 04.09.2013
Series:	ACM Conferences
Subjects:	Applied computing > Physical sciences and engineering > Electronics Hardware > Hardware validation Hardware > Integrated circuits supply voltage scaling ultra-low power digital TFET SRAMs energy efficiency low power analog/RF tunnel FETs steep switching
ISBN:	1479912352, 9781479912353
Online Access:	Get full text
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