Steep switching tunnel FET a promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications
Steep switching Tunnel FETs (TFET) can extend the supply voltage scaling with improved energy efficiency for both digital and analog/RF application. In this paper, recent approaches on III-V Tunnel FET device design, prototype device demonstration, modeling techniques and performance evaluations for...
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| Vydáno v: | Proceedings of the 2013 International Symposium on Low Power Electronics and Design s. 145 - 150 |
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| Hlavní autoři: | , , |
| Médium: | Konferenční příspěvek |
| Jazyk: | angličtina |
| Vydáno: |
Piscataway, NJ, USA
IEEE Press
04.09.2013
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| Edice: | ACM Conferences |
| Témata: | |
| ISBN: | 1479912352, 9781479912353 |
| On-line přístup: | Získat plný text |
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| Shrnutí: | Steep switching Tunnel FETs (TFET) can extend the supply voltage scaling with improved energy efficiency for both digital and analog/RF application. In this paper, recent approaches on III-V Tunnel FET device design, prototype device demonstration, modeling techniques and performance evaluations for digital and analog/RF application are discussed and compared to CMOS technology. The impact of steep switching, uni-directional conduction and negative differential resistance characteristics are explored from circuit design perspective. Circuit-level implementation such as III-V TFET based Adder and SRAM design shows significant improvement on energy efficiency and power reduction below 0.3V for digital application. The analog/RF metric evaluation is presented including gm/Ids metric, temperature sensitivity, parasitic impact and noise performance. TFETs exhibit promising performance for high frequency, high sensitivity and ultra-low power RF rectifier application. |
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| ISBN: | 1479912352 9781479912353 |
| DOI: | 10.5555/2648668.2648707 |

