Steep switching tunnel FET a promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications

Steep switching Tunnel FETs (TFET) can extend the supply voltage scaling with improved energy efficiency for both digital and analog/RF application. In this paper, recent approaches on III-V Tunnel FET device design, prototype device demonstration, modeling techniques and performance evaluations for...

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Veröffentlicht in:Proceedings of the 2013 International Symposium on Low Power Electronics and Design S. 145 - 150
Hauptverfasser: Liu, Huichu, Datta, Suman, Narayanan, Vijaykrishnan
Format: Tagungsbericht
Sprache:Englisch
Veröffentlicht: Piscataway, NJ, USA IEEE Press 04.09.2013
Schriftenreihe:ACM Conferences
Schlagworte:
Applied computing > Physical sciences and engineering > Electronics
Hardware > Hardware validation
Hardware > Integrated circuits
supply voltage scaling
ultra-low power digital
TFET SRAMs
energy efficiency
low power analog/RF
tunnel FETs
steep switching
ISBN:1479912352, 9781479912353
Online-Zugang:Volltext
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Zusammenfassung:Steep switching Tunnel FETs (TFET) can extend the supply voltage scaling with improved energy efficiency for both digital and analog/RF application. In this paper, recent approaches on III-V Tunnel FET device design, prototype device demonstration, modeling techniques and performance evaluations for digital and analog/RF application are discussed and compared to CMOS technology. The impact of steep switching, uni-directional conduction and negative differential resistance characteristics are explored from circuit design perspective. Circuit-level implementation such as III-V TFET based Adder and SRAM design shows significant improvement on energy efficiency and power reduction below 0.3V for digital application. The analog/RF metric evaluation is presented including gm/Ids metric, temperature sensitivity, parasitic impact and noise performance. TFETs exhibit promising performance for high frequency, high sensitivity and ultra-low power RF rectifier application.
ISBN:1479912352
9781479912353
DOI:10.5555/2648668.2648707