Bowman, K. A., Austin, B. L., Eble, J. C., Tang, X., & Meindl, J. D. (1999, August 17). A physical alpha-power law MOSFET model. Low Power Electronics and Design 1999: Proceedings of the 1999 International Symposium, 218-222. https://doi.org/10.1145/313817.313930
Chicago Style (17th ed.) CitationBowman, Keith A., Blanca L. Austin, John C. Eble, Xinghai Tang, and James D. Meindl. "A Physical Alpha-power Law MOSFET Model." Low Power Electronics and Design 1999: Proceedings of the 1999 International Symposium 17 Aug. 1999: 218-222. https://doi.org/10.1145/313817.313930.
MLA (9th ed.) CitationBowman, Keith A., et al. "A Physical Alpha-power Law MOSFET Model." Low Power Electronics and Design 1999: Proceedings of the 1999 International Symposium, 17 Aug. 1999, pp. 218-222, https://doi.org/10.1145/313817.313930.