A physical alpha-power law MOSFET model

A new compact physics-based alpha-power law MOSFET model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original Alpha-Power Law Model with their physical origins. The new model, verified...

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Vydáno v:Low Power Electronics and Design 1999: Proceedings of the 1999 International Symposium s. 218 - 222
Hlavní autoři: Bowman, Keith A., Austin, Blanca L., Eble, John C., Tang, Xinghai, Meindl, James D.
Médium: Konferenční příspěvek
Jazyk:angličtina
Vydáno: New York, NY, USA ACM 17.08.1999
IEEE
Edice:ACM Conferences
Témata:
Applied computing > Physical sciences and engineering > Electronics
Circuit optimization
Circuit simulation
Current measurement
Hardware > Electronic design automation > Physical design (EDA)
Hardware > Very large scale integration design
Joining processes
Mathematical model
MOSFET circuits
Power generation
Power measurement
Power MOSFET
Velocity measurement
ISBN:158113133X, 9781581131338
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Popis
Shrnutí:A new compact physics-based alpha-power law MOSFET model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original Alpha-Power Law Model with their physical origins. The new model, verified by HSPICE simulations and measured data, includes: (1) a subthreshold region of operation for evaluating the on/off current trade-off that becomes a dominant low power design issue as technology scales, (2) the effects of vertical and lateral high field mobility degradation and velocity saturation, and (3) threshold voltage roll-off. Model projections for MOSFET CV/I indicate a 2X-performance opportunity compared to NTRS extrapolations for the 250, 180, and 150 nm generations subject to maximum leakage current estimates of the roadmap. NTRS and model calculations converge at the 70 nm technology generation, which exhibits pronounced on/off current interdependence for low power gigascale integration (GSI).
Bibliografie:SourceType-Conference Papers & Proceedings-1
ObjectType-Conference Paper-1
content type line 25
ISBN:158113133X
9781581131338
DOI:10.1145/313817.313930