Preparation and electrical characterization of silicon structures formed by wafer bonding /
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| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Göteborg :
Chalmers Tekniska Högskola,
1991
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| Ausgabe: | 1st ed. |
| Schriftenreihe: | TECHNICAL report
No. 223 |
| Schlagworte: | |
| ISBN: | 917032655X |
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| 100 | 1 | |a Bengtsson, Stefan | |
| 242 | 1 | 0 | |a Príprava a elektrická charakteristika kremíkových štruktúr vytvorených plátkovým prepojením |
| 245 | 1 | 0 | |a Preparation and electrical characterization of silicon structures formed by wafer bonding / |c Stefan Bengtsson |
| 250 | |a 1st ed. | ||
| 260 | |a Göteborg : |b Chalmers Tekniska Högskola, |c 1991 | ||
| 300 | |a Preruš. str. : |b fotogr., grafy, lit., obr., tab. ; | ||
| 490 | 0 | |a TECHNICAL report |v No. 223 | |
| 502 | |d 17. 1. 1992 | ||
| 653 | 1 | |a rozhranie |a spájanie |a adhezívna vrstva |a elektrochémia |a polovodičová elektronika | |
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| 760 | 1 | |t Technical report | |
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