Pyramidal MicroLEDs in the Same Material System Delivering RGB

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Název: Pyramidal MicroLEDs in the Same Material System Delivering RGB
Autoři: Martinovic, I., Hsu, C. W., Le, S. P., Svensson, Christer, Vorobiev, Andrei, 1963, Tseng, Eric, Holtz, P. O., Rullik, Lisa
Zdroj: International Symposium, Seminar, and Exhibition, Display Week 2025, San Jose, USA Digest of Technical Papers - SID International Symposium. 56(1):336-338
Témata: HUD, Hybridization, HMD, MicroLED, Pyramidal LED, CMOS, MicroDisplay, InGaN/GaN, RGB
Popis: An innovative microLED technology based on a novel bottom-up growth technique is demonstrated. The novel technology allows for overcoming main fundamental limitations hindering further development of microLEDs. The technology allows for RGB emission within a single materials system (InGaN/GaN). Blue and green emissions have earlier been demonstrated, but now also a red emission peaking at 635nm is realized. The technology is suited for hybridization with extremely high accuracy, using a cold-bonding flip-chip method. MicroLED technology based on the pyramidal architecture is promising for manufacturing of micro displays for applications such as Head-Mounted-Displays (HMDs) and HeadUp-Displays (HUDs).
Přístupová URL adresa: https://research.chalmers.se/publication/548934
Databáze: SwePub
Popis
Abstrakt:An innovative microLED technology based on a novel bottom-up growth technique is demonstrated. The novel technology allows for overcoming main fundamental limitations hindering further development of microLEDs. The technology allows for RGB emission within a single materials system (InGaN/GaN). Blue and green emissions have earlier been demonstrated, but now also a red emission peaking at 635nm is realized. The technology is suited for hybridization with extremely high accuracy, using a cold-bonding flip-chip method. MicroLED technology based on the pyramidal architecture is promising for manufacturing of micro displays for applications such as Head-Mounted-Displays (HMDs) and HeadUp-Displays (HUDs).
ISSN:21680159
0097966X
DOI:10.1002/sdtp.18160