Zobraziť v EDS

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Uložené v:
Podrobná bibliografia
Názov: Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Autori: Ferrand-Drake Del Castillo, Ragnar, 1993, Chen, Ding-Yuan, 1991, Chen, J. T., Thorsell, Mattias, 1982, Darakchieva, Vanya, Rorsman, Niklas, 1964
Zdroj: IEEE Transactions on Electron Devices. 71(6):3596-3602
Predmety: MODFETs, HEMTs, Aluminum gallium nitride, Wide band gap semiconductors, Epitaxial growth, AlGaN/GaN, back-barrier, Logic gates, Electrons, short channel effect (SCE), dispersion, high electron mobility transistors (HEMTs), double heterostructure
Popis: The impact of different carbon concentrations in the Al Ga N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 10 to 5 10 cm , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency. A C-doping of 1 10 cm offers the highest output power at maximum power added efficiency (PAE) (1.8 W/mm), whereas 3 10 cm doping provides the highest PAE ( 40%). The C-profiles acquired by using secondary ion mass spectroscopy (SIMS), in combination with DCTS, is used to explain the electron trapping effects. Traps associated with the C-doping in the back-barrier are identified and the bias ranges for the trap activation are discussed. The study shows the importance of considering the C-doping level in the back-barrier of microwave GaN HEMTs for power amplification and generation.
Prístupová URL adresa: https://research.chalmers.se/publication/541094
https://research.chalmers.se/publication/544478
Databáza: SwePub
FullText Text:
  Availability: 0
CustomLinks:
  – Url: https://resolver.ebscohost.com/openurl?sid=EBSCO:edsswe&genre=article&issn=15579646&ISBN=&volume=71&issue=6&date=20240101&spage=3596&pages=3596-3602&title=IEEE Transactions on Electron Devices&atitle=Characterization%20of%20Trapping%20Effects%20Related%20to%20Carbon%20Doping%20Level%20in%20AlGaN%20Back-Barriers%20for%20AlGaN%2FGaN%20HEMTs&aulast=Ferrand-Drake%20Del%20Castillo%2C%20Ragnar&id=DOI:10.1109/TED.2024.3392177
    Name: Full Text Finder
    Category: fullText
    Text: Full Text Finder
    Icon: https://imageserver.ebscohost.com/branding/images/FTF.gif
    MouseOverText: Full Text Finder
  – Url: https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=EBSCO&SrcAuth=EBSCO&DestApp=WOS&ServiceName=TransferToWoS&DestLinkType=GeneralSearchSummary&Func=Links&author=Del%20Castillo%20F
    Name: ISI
    Category: fullText
    Text: Nájsť tento článok vo Web of Science
    Icon: https://imagesrvr.epnet.com/ls/20docs.gif
    MouseOverText: Nájsť tento článok vo Web of Science
Header DbId: edsswe
DbLabel: SwePub
An: edsswe.oai.research.chalmers.se.e3630ef9.365b.4b05.b693.c79156f95089
RelevancyScore: 964
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 964.415405273438
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Ferrand-Drake+Del+Castillo%2C+Ragnar%22">Ferrand-Drake Del Castillo, Ragnar</searchLink>, 1993<br /><searchLink fieldCode="AR" term="%22Chen%2C+Ding-Yuan%22">Chen, Ding-Yuan</searchLink>, 1991<br /><searchLink fieldCode="AR" term="%22Chen%2C+J%2E+T%2E%22">Chen, J. T.</searchLink><br /><searchLink fieldCode="AR" term="%22Thorsell%2C+Mattias%22">Thorsell, Mattias</searchLink>, 1982<br /><searchLink fieldCode="AR" term="%22Darakchieva%2C+Vanya%22">Darakchieva, Vanya</searchLink><br /><searchLink fieldCode="AR" term="%22Rorsman%2C+Niklas%22">Rorsman, Niklas</searchLink>, 1964
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <i>IEEE Transactions on Electron Devices</i>. 71(6):3596-3602
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22MODFETs%22">MODFETs</searchLink><br /><searchLink fieldCode="DE" term="%22HEMTs%22">HEMTs</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+gallium+nitride%22">Aluminum gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Wide+band+gap+semiconductors%22">Wide band gap semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxial+growth%22">Epitaxial growth</searchLink><br /><searchLink fieldCode="DE" term="%22AlGaN%2FGaN%22">AlGaN/GaN</searchLink><br /><searchLink fieldCode="DE" term="%22back-barrier%22">back-barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Logic+gates%22">Logic gates</searchLink><br /><searchLink fieldCode="DE" term="%22Electrons%22">Electrons</searchLink><br /><searchLink fieldCode="DE" term="%22short+channel+effect+%28SCE%29%22">short channel effect (SCE)</searchLink><br /><searchLink fieldCode="DE" term="%22dispersion%22">dispersion</searchLink><br /><searchLink fieldCode="DE" term="%22high+electron+mobility+transistors+%28HEMTs%29%22">high electron mobility transistors (HEMTs)</searchLink><br /><searchLink fieldCode="DE" term="%22double+heterostructure%22">double heterostructure</searchLink>
– Name: Abstract
  Label: Description
  Group: Ab
  Data: The impact of different carbon concentrations in the Al Ga N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 10 to 5 10 cm , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency. A C-doping of 1 10 cm offers the highest output power at maximum power added efficiency (PAE) (1.8 W/mm), whereas 3 10 cm doping provides the highest PAE ( 40%). The C-profiles acquired by using secondary ion mass spectroscopy (SIMS), in combination with DCTS, is used to explain the electron trapping effects. Traps associated with the C-doping in the back-barrier are identified and the bias ranges for the trap activation are discussed. The study shows the importance of considering the C-doping level in the back-barrier of microwave GaN HEMTs for power amplification and generation.
– Name: URL
  Label: Access URL
  Group: URL
  Data: <link linkTarget="URL" linkTerm="https://research.chalmers.se/publication/541094" linkWindow="_blank">https://research.chalmers.se/publication/541094</link><br /><link linkTarget="URL" linkTerm="https://research.chalmers.se/publication/544478" linkWindow="_blank">https://research.chalmers.se/publication/544478</link>
PLink https://erproxy.cvtisr.sk/sfx/access?url=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edsswe&AN=edsswe.oai.research.chalmers.se.e3630ef9.365b.4b05.b693.c79156f95089
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TED.2024.3392177
    Languages:
      – Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 3596
    Subjects:
      – SubjectFull: MODFETs
        Type: general
      – SubjectFull: HEMTs
        Type: general
      – SubjectFull: Aluminum gallium nitride
        Type: general
      – SubjectFull: Wide band gap semiconductors
        Type: general
      – SubjectFull: Epitaxial growth
        Type: general
      – SubjectFull: AlGaN/GaN
        Type: general
      – SubjectFull: back-barrier
        Type: general
      – SubjectFull: Logic gates
        Type: general
      – SubjectFull: Electrons
        Type: general
      – SubjectFull: short channel effect (SCE)
        Type: general
      – SubjectFull: dispersion
        Type: general
      – SubjectFull: high electron mobility transistors (HEMTs)
        Type: general
      – SubjectFull: double heterostructure
        Type: general
    Titles:
      – TitleFull: Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Ferrand-Drake Del Castillo, Ragnar
      – PersonEntity:
          Name:
            NameFull: Chen, Ding-Yuan
      – PersonEntity:
          Name:
            NameFull: Chen, J. T.
      – PersonEntity:
          Name:
            NameFull: Thorsell, Mattias
      – PersonEntity:
          Name:
            NameFull: Darakchieva, Vanya
      – PersonEntity:
          Name:
            NameFull: Rorsman, Niklas
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 15579646
            – Type: issn-print
              Value: 00189383
            – Type: issn-locals
              Value: CTH_SWEPUB
          Numbering:
            – Type: volume
              Value: 71
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: IEEE Transactions on Electron Devices
              Type: main
ResultId 1