Electrical Properties of SiO2/GaN MOS Capacitors Fabricated on GaN(000\overline{1}) Substrates
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| Název: | Electrical Properties of SiO2/GaN MOS Capacitors Fabricated on GaN(000\overline{1}) Substrates / GaN(000\overline{1})面上に形成したSiO2/GaN MOSキャパシタの電気特性評価 |
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| Autoři: | Akitaka Yoshigoe, Heiji Watanabe, Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Takuji Hosoi, Yuhei Wada, 冨ケ原 一樹, 吉越 章隆, 和田 悠平, 志村 考功, 渡部 平司, 溝端 秀聡, 細井 卓治, 野崎 幹人 |
| Zdroj: | JSAP Annual Meetings Extended Abstracts. 2021, :2400 |
| Databáze: | J-STAGE |
Nájsť tento článok vo Web of Science | ISSN: | 24367613 |
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| DOI: | 10.11470/jsapmeeting.2021.1.0_2400 |