Recent advances in ferroelectric materials, devices, and in-memory computing applications
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| Title: | Recent advances in ferroelectric materials, devices, and in-memory computing applications |
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| Authors: | Hwiho Hwang, Sangwook Youn, Hyungjin Kim |
| Source: | Nano Convergence, Vol 12, Iss 1, Pp 1-31 (2025) |
| Publisher Information: | SpringerOpen, 2025. |
| Publication Year: | 2025 |
| Collection: | LCC:Technology LCC:Chemical technology LCC:Biotechnology LCC:Science LCC:Physics |
| Subject Terms: | Ferroelectric thin films, Non-volatile memory devices, In-memory computing, Neuromorphic computing, Hardware security, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999 |
| Description: | Abstract Ferroelectric memories have undergone a transformative evolution from conventional perovskite-based materials to modern fluorite-structured ferroelectrics, driven by the pursuit of scalable, low-power, and CMOS-compatible non-volatile memory solutions. The observation of ferroelectricity in nanoscale HfO2-based films has enabled integration with CMOS-compatible processes, providing advantages such as potential scalability, low power consumption, and non-volatility, while facilitating continued scaling and high-density integration. Leveraging established materials infrastructure in the semiconductor industry, hafnia–based ferroelectrics have been incorporated in various memory architectures, including ferroelectric random-access memory (FeRAM), ferroelectric tunnel junctions (FTJs), ferroelectric field-effect transistors (FeFETs), and ferroelectric memcapacitors (FeCAPs). Beyond conventional non-volatile storage, these devices have also emerged as promising building blocks for in-memory computing applications, including neuromorphic systems, hardware security primitives, and associative memory. In this review, we explore the historical development of ferroelectric memories from a materials–device co-design perspective, examine recent advances in device architectures and in-memory computing applications, and discuss the remaining challenges in endurance, retention, variability, and scaling. Finally, we propose future research directions that integrating material innovation, interface engineering, and circuit-level optimization to realize the full potential of ferroelectric memories in next-generation computing platforms. Graphical abstract |
| Document Type: | article |
| File Description: | electronic resource |
| Language: | English |
| ISSN: | 2196-5404 |
| Relation: | https://doaj.org/toc/2196-5404 |
| DOI: | 10.1186/s40580-025-00520-2 |
| Access URL: | https://doaj.org/article/5413daaeac9647c69c932378e530adf0 |
| Accession Number: | edsdoj.5413daaeac9647c69c932378e530adf0 |
| Database: | Directory of Open Access Journals |
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Nájsť tento článok vo Web of Science | Abstract: | Abstract Ferroelectric memories have undergone a transformative evolution from conventional perovskite-based materials to modern fluorite-structured ferroelectrics, driven by the pursuit of scalable, low-power, and CMOS-compatible non-volatile memory solutions. The observation of ferroelectricity in nanoscale HfO2-based films has enabled integration with CMOS-compatible processes, providing advantages such as potential scalability, low power consumption, and non-volatility, while facilitating continued scaling and high-density integration. Leveraging established materials infrastructure in the semiconductor industry, hafnia–based ferroelectrics have been incorporated in various memory architectures, including ferroelectric random-access memory (FeRAM), ferroelectric tunnel junctions (FTJs), ferroelectric field-effect transistors (FeFETs), and ferroelectric memcapacitors (FeCAPs). Beyond conventional non-volatile storage, these devices have also emerged as promising building blocks for in-memory computing applications, including neuromorphic systems, hardware security primitives, and associative memory. In this review, we explore the historical development of ferroelectric memories from a materials–device co-design perspective, examine recent advances in device architectures and in-memory computing applications, and discuss the remaining challenges in endurance, retention, variability, and scaling. Finally, we propose future research directions that integrating material innovation, interface engineering, and circuit-level optimization to realize the full potential of ferroelectric memories in next-generation computing platforms. Graphical abstract |
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| ISSN: | 21965404 |
| DOI: | 10.1186/s40580-025-00520-2 |