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Surface characterization of AlGaN grown on Si (111) substrates

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Název: Surface characterization of AlGaN grown on Si (111) substrates
Autoři: Pan X, Wang XL, Xiao HL, Wang CM, Feng C, Jiang LJ, Yin HB, Chen H, Pan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
Rok vydání: 2011
Sbírka: Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
Témata: Molecular-beam Epitaxy, Field-effect Transistors, Vapor-phase Epitaxy, Group-iii Nitrides, Inversion Domains, High-temperature, Gan, Si(111), Aln, Sapphire, 半导体材料, atomic layer deposition, vapor phase epitaxy, high temperature, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd
Popis: Up to 500 nm thick crack-free Al(0.25)Ga(0.75)N and Al(0.32)Ga(0.68)N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal quality of samples. The analyses show that the Al source flux is an important factor in growing AlGaN on Si (111). The information from the Micro-Raman spectra supported that Al atoms are gathered at nearby areas of the pits originated from the AlN/Si (111) interface in the initial stage of AlGaN growth. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
Druh dokumentu: report
Jazyk: unknown
Relation: JOURNAL OF CRYSTAL GROWTH; Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H.Surface characterization of AlGaN grown on Si (111) substrates,JOURNAL OF CRYSTAL GROWTH,2011,331(1):29-32; http://ir.semi.ac.cn/handle/172111/22661
Dostupnost: http://ir.semi.ac.cn/handle/172111/22661
Přístupové číslo: edsbas.F3997141
Databáze: BASE
Popis
Abstrakt:Up to 500 nm thick crack-free Al(0.25)Ga(0.75)N and Al(0.32)Ga(0.68)N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal quality of samples. The analyses show that the Al source flux is an important factor in growing AlGaN on Si (111). The information from the Micro-Raman spectra supported that Al atoms are gathered at nearby areas of the pits originated from the AlN/Si (111) interface in the initial stage of AlGaN growth. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.