The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization

Saved in:
Bibliographic Details
Title: The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization
Authors: N. A. Quadir, Amit Jain, S. Kashfi, Lutfi Albasha, Nasser Qaddoumi
Source: IET Circuits, Devices and Systems, Vol 2023 (2023)
Publisher Information: Hindawi-IET
Publication Year: 2023
Collection: Directory of Open Access Journals: DOAJ Articles
Subject Terms: Computer engineering. Computer hardware, TK7885-7895
Description: A power amplifier design operating at 28 GHz for communication applications is presented in this paper. Analog predistorted technique is used to improve the linearity using a cold mode MOSFET linearizer. The paper reports +19.8 dBm of peak power at the output and power-added efficiency (PAE) of 17% is attained by the designed circuit. The 1-dB compression point linearity was +18.6 dBm. The adjacent channel power ratio (ACPR) simulations were performed for the different communication standards like 802_11n_40M, CDMA, IS-95, and 802_11n_20M. Design specification variations of the amplifier have been analyzed over five process corners and simulations were performed to validate compliance with standards and robustness of the designed circuit. Monte Carlo simulation were performed to assess the performance over statistical variability of PAE and power gain. It is believed that this linearization design and the verifications used are done for the first time on a 65-nm RFCMOS process.
Document Type: article in journal/newspaper
Language: English
Relation: http://dx.doi.org/10.1049/2023/2265697; https://doaj.org/toc/1751-8598; https://doaj.org/article/d3d0af109b684a16bd14110621c9cfae
DOI: 10.1049/2023/2265697
Availability: https://doi.org/10.1049/2023/2265697
https://doaj.org/article/d3d0af109b684a16bd14110621c9cfae
Accession Number: edsbas.52CA4BFE
Database: BASE
Be the first to leave a comment!
You must be logged in first