Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures

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Bibliographic Details
Title: Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures
Authors: WINDISCH, R.EI.NE.R., Heremans, Paul, Dutta, Barundeb, Kuijk, Maarten, Schoberth, Stefan, Genoe, Jan, Kiesel, P., Döhler, G.H., Borghs, Staf
Contributors: Schubert, E.F.
Source: ISBN:0-8194-2718-7 ; ISSN:0277-786X.
Publisher Information: Society of Photo-optical Instrumentation Engineers
Publication Year: 1998
Subject Terms: Science & Technology, Physical Sciences, Optics, surface texturing, non-resonant cavity light emitting diode, high efficiency light-emitting diode, epitaxial lift-off, 4006 Communications engineering, 4009 Electronics, sensors and digital hardware, 5102 Atomic, molecular and optical physics
Description: Very high efficiency GaAs light-emitting diodes are based on surface-textured thin film structures. The technique relies on surface texturing by "natural lithography", where a monolayer of randomly positioned polystyrene spheres acts as a mask for etching a random diffraction grating. We present results of a systematic experimental study on the influence of the surface-texturing parameters on the efficiency of these LEDs. The study was performed on GaAs/AlGaAs structures optimized for photoluminescence and electroluminescence, respectively. It shows that the maximum enhancement of the light output occurs for spheres of 200 nm to 300 nm diameter, which must cover more than 50% of the surface. The optimum etching depth is approximately 160 nm. Using these conditions, an external quantum efficiency (corrected for the respective emission wavelength) for MBE-grown GaAs light emitting diodes of 10% was achieved for a device of only 50×75 μm2 in size. ; status: Published
Document Type: conference object
File Description: application/pdf
Language: English
ISBN: 978-0-8194-2718-2
0-8194-2718-7
Relation: https://lirias.kuleuven.be/handle/123456789/637143; https://doi.org/10.1117/12.304414
DOI: 10.1117/12.304414
Availability: https://lirias.kuleuven.be/handle/123456789/637143
https://lirias.kuleuven.be/retrieve/c3101bad-29bb-4ee5-a3db-080763f375ce
https://doi.org/10.1117/12.304414
Rights: info:eu-repo/semantics/openAccess ; public
Accession Number: edsbas.433B188C
Database: BASE
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