Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures
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| Názov: | Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures |
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| Autori: | WINDISCH, R.EI.NE.R., Heremans, Paul, Dutta, Barundeb, Kuijk, Maarten, Schoberth, Stefan, Genoe, Jan, Kiesel, P., Döhler, G.H., Borghs, Staf |
| Prispievatelia: | Schubert, E.F. |
| Zdroj: | ISBN:0-8194-2718-7 ; ISSN:0277-786X. |
| Informácie o vydavateľovi: | Society of Photo-optical Instrumentation Engineers |
| Rok vydania: | 1998 |
| Predmety: | Science & Technology, Physical Sciences, Optics, surface texturing, non-resonant cavity light emitting diode, high efficiency light-emitting diode, epitaxial lift-off, 4006 Communications engineering, 4009 Electronics, sensors and digital hardware, 5102 Atomic, molecular and optical physics |
| Popis: | Very high efficiency GaAs light-emitting diodes are based on surface-textured thin film structures. The technique relies on surface texturing by "natural lithography", where a monolayer of randomly positioned polystyrene spheres acts as a mask for etching a random diffraction grating. We present results of a systematic experimental study on the influence of the surface-texturing parameters on the efficiency of these LEDs. The study was performed on GaAs/AlGaAs structures optimized for photoluminescence and electroluminescence, respectively. It shows that the maximum enhancement of the light output occurs for spheres of 200 nm to 300 nm diameter, which must cover more than 50% of the surface. The optimum etching depth is approximately 160 nm. Using these conditions, an external quantum efficiency (corrected for the respective emission wavelength) for MBE-grown GaAs light emitting diodes of 10% was achieved for a device of only 50×75 μm2 in size. ; status: Published |
| Druh dokumentu: | conference object |
| Popis súboru: | application/pdf |
| Jazyk: | English |
| ISBN: | 978-0-8194-2718-2 0-8194-2718-7 |
| Relation: | https://lirias.kuleuven.be/handle/123456789/637143; https://doi.org/10.1117/12.304414 |
| DOI: | 10.1117/12.304414 |
| Dostupnosť: | https://lirias.kuleuven.be/handle/123456789/637143 https://lirias.kuleuven.be/retrieve/c3101bad-29bb-4ee5-a3db-080763f375ce https://doi.org/10.1117/12.304414 |
| Rights: | info:eu-repo/semantics/openAccess ; public |
| Prístupové číslo: | edsbas.433B188C |
| Databáza: | BASE |
Nájsť tento článok vo Web of Science | Abstrakt: | Very high efficiency GaAs light-emitting diodes are based on surface-textured thin film structures. The technique relies on surface texturing by "natural lithography", where a monolayer of randomly positioned polystyrene spheres acts as a mask for etching a random diffraction grating. We present results of a systematic experimental study on the influence of the surface-texturing parameters on the efficiency of these LEDs. The study was performed on GaAs/AlGaAs structures optimized for photoluminescence and electroluminescence, respectively. It shows that the maximum enhancement of the light output occurs for spheres of 200 nm to 300 nm diameter, which must cover more than 50% of the surface. The optimum etching depth is approximately 160 nm. Using these conditions, an external quantum efficiency (corrected for the respective emission wavelength) for MBE-grown GaAs light emitting diodes of 10% was achieved for a device of only 50×75 μm2 in size. ; status: Published |
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| ISBN: | 9780819427182 0819427187 |
| DOI: | 10.1117/12.304414 |