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Thickness-Dependent Band Gap Modification in BaBiO 3

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Název: Thickness-Dependent Band Gap Modification in BaBiO 3
Autoři: Rosa Luca Bouwmeester, Alexander Brinkman, Kai Sotthewes
Zdroj: Nanomaterials, Vol 11, Iss 882, p 882 (2021)
Informace o vydavateli: MDPI AG
Rok vydání: 2021
Sbírka: Directory of Open Access Journals: DOAJ Articles
Témata: BaBiO3, scanning tunneling miscroscopy, spectroscopy, pulsed laser deposition, perovskite, complex oxide, Chemistry, QD1-999
Popis: The material BaBiO 3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO 3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap ( E G > 1.2 V) to small-gap ( E G ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO 3 film thickness. However, even for an ultra-thin BaBiO 3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.
Druh dokumentu: article in journal/newspaper
Jazyk: English
Relation: https://www.mdpi.com/2079-4991/11/4/882; https://doaj.org/toc/2079-4991; https://doaj.org/article/45ca9ef41c94478ea66c4887371802af
DOI: 10.3390/nano11040882
Dostupnost: https://doi.org/10.3390/nano11040882
https://doaj.org/article/45ca9ef41c94478ea66c4887371802af
Přístupové číslo: edsbas.3E197478
Databáze: BASE
Popis
Abstrakt:The material BaBiO <semantics> 3 </semantics> is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO <semantics> 3 </semantics> thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap ( <semantics> E G </semantics> > 1.2 V) to small-gap ( <semantics> E G </semantics> ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO <semantics> 3 </semantics> film thickness. However, even for an ultra-thin BaBiO <semantics> 3 </semantics> film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.
DOI:10.3390/nano11040882