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Thickness-Dependent Band Gap Modification in BaBiO 3

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Bibliographic Details
Title: Thickness-Dependent Band Gap Modification in BaBiO 3
Authors: Rosa Luca Bouwmeester, Alexander Brinkman, Kai Sotthewes
Source: Nanomaterials, Vol 11, Iss 882, p 882 (2021)
Publisher Information: MDPI AG
Publication Year: 2021
Collection: Directory of Open Access Journals: DOAJ Articles
Subject Terms: BaBiO3, scanning tunneling miscroscopy, spectroscopy, pulsed laser deposition, perovskite, complex oxide, Chemistry, QD1-999
Description: The material BaBiO 3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO 3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap ( E G > 1.2 V) to small-gap ( E G ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO 3 film thickness. However, even for an ultra-thin BaBiO 3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.
Document Type: article in journal/newspaper
Language: English
Relation: https://www.mdpi.com/2079-4991/11/4/882; https://doaj.org/toc/2079-4991; https://doaj.org/article/45ca9ef41c94478ea66c4887371802af
DOI: 10.3390/nano11040882
Availability: https://doi.org/10.3390/nano11040882
https://doaj.org/article/45ca9ef41c94478ea66c4887371802af
Accession Number: edsbas.3E197478
Database: BASE
Description
Abstract:The material BaBiO <semantics> 3 </semantics> is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO <semantics> 3 </semantics> thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap ( <semantics> E G </semantics> > 1.2 V) to small-gap ( <semantics> E G </semantics> ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO <semantics> 3 </semantics> film thickness. However, even for an ultra-thin BaBiO <semantics> 3 </semantics> film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.
DOI:10.3390/nano11040882