InSb/InP Core–Shell Colloidal Quantum Dots for Sensitive and Fast Short-Wave Infrared Photodetectors
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| Titel: | InSb/InP Core–Shell Colloidal Quantum Dots for Sensitive and Fast Short-Wave Infrared Photodetectors |
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| Autoren: | Peng, Lucheng, Wang, Yongjie, Ren, Yurong, Wang, Zhuoran, Cao, Pengfei, Konstantatos, Gerasimos |
| Quelle: | UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC) ACS Nano |
| Verlagsinformationen: | American Chemical Society (ACS), 2024. |
| Publikationsjahr: | 2024 |
| Schlagwörter: | Optical detectors, Dispositius optoelectrònics, Quantum dots, Colloidal quantum dots, Photodetectors, InSb, External quantum efficiency,Indium antimonide,Layers,Quantum dots,Sensors, Optoelectronic devices, Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica, 7. Clean energy, 3. Good health, Short-wave infrared, III-V, Punts quàntics, Detectors de raigs infraroigs, Infrared detectors, Detectors òptics |
| Beschreibung: | Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order to unleash the full potential of this technology, there is a need for a material that is environmentally friendly, thus RoHS compliant, and possesses adequate optoelectronic properties to deliver high-performance devices. InSb CQDs hold great potential in view of their RoHS-compliant nature and─in principle─facile access to the SWIR. However, to date progress in realizing high-performance optoelectronic devices, including photodetectors (PDs), has been limited. Here, we have developed a synthesis method for producing size-tunable InSb CQDs with distinct excitonic peaks spanning a wide range from 900 to 1750 nm. To passivate the surface defects and enhance the photoluminescence (PL) efficiency of InSb CQDs, we further designed an InSb/InP core-shell structure. By employing the InSb/InP core-shell CQDs in a photodiode device stack, we report on robust InSb CQD SWIR photodetectors that exhibit an external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, a photoresponse time of 70 ns, and a specific detectivity of 4.4 × 1011 jones. |
| Publikationsart: | Article |
| Dateibeschreibung: | application/pdf; application/vnd.openxmlformats-officedocument.wordprocessingml.document |
| Sprache: | English |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.3c12007 |
| Zugangs-URL: | https://pubmed.ncbi.nlm.nih.gov/38305195 https://hdl.handle.net/2117/401812 |
| Rights: | STM Policy #29 CC BY NC ND |
| Dokumentencode: | edsair.doi.dedup.....c3c6715b1efb838cb5d2b2fddd74c58c |
| Datenbank: | OpenAIRE |
Nájsť tento článok vo Web of Science | Abstract: | Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order to unleash the full potential of this technology, there is a need for a material that is environmentally friendly, thus RoHS compliant, and possesses adequate optoelectronic properties to deliver high-performance devices. InSb CQDs hold great potential in view of their RoHS-compliant nature and─in principle─facile access to the SWIR. However, to date progress in realizing high-performance optoelectronic devices, including photodetectors (PDs), has been limited. Here, we have developed a synthesis method for producing size-tunable InSb CQDs with distinct excitonic peaks spanning a wide range from 900 to 1750 nm. To passivate the surface defects and enhance the photoluminescence (PL) efficiency of InSb CQDs, we further designed an InSb/InP core-shell structure. By employing the InSb/InP core-shell CQDs in a photodiode device stack, we report on robust InSb CQD SWIR photodetectors that exhibit an external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, a photoresponse time of 70 ns, and a specific detectivity of 4.4 × 1011 jones. |
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| ISSN: | 1936086X 19360851 |
| DOI: | 10.1021/acsnano.3c12007 |