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Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects

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Bibliographic Details
Title: Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects
Authors: Saro, Marco, de Pieri, Francesco, Carlotto, Andrea, Fornasier, Mirko, Rampazzo, Fabiana, De Santi, Carlo, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, Bisi, Davide, Guidry, Matthew, Keller, Stacia, Mishra, Umesh
Source: 2024 IEEE International Reliability Physics Symposium (IRPS). :5B.2-1
Publisher Information: IEEE, 2024.
Publication Year: 2024
Subject Terms: Current collapse, Deep levels, HEMT, N-Polar-GaN, Reliability
Description: A full characterization of deep level effects in N-polar GaN-based HEMTs has been carried out by means of Drain Current Transient Spectroscopy (DCTS). The effect of ohmic contacts (alloyed or regrown), composition of AlGaN cap layer, and of the quality of the epitaxial layers have been studied. We show that the occurrence of an "antidispersion" effect, i.e. of a transient increase of ID during pulsed measurements, is due to a negative shift of the threshold voltage, related to the ionization of Fe-related defects. Through device and epitaxy optimization, dispersion-free devices, showing a 15% transient increase of drain current were obtained.
Document Type: Article
Conference object
DOI: 10.1109/irps48228.2024.10529479
Rights: STM Policy #29
Accession Number: edsair.doi.dedup.....b9b51bc95934c52e31ce36c42e125f68
Database: OpenAIRE
Description
Abstract:A full characterization of deep level effects in N-polar GaN-based HEMTs has been carried out by means of Drain Current Transient Spectroscopy (DCTS). The effect of ohmic contacts (alloyed or regrown), composition of AlGaN cap layer, and of the quality of the epitaxial layers have been studied. We show that the occurrence of an "antidispersion" effect, i.e. of a transient increase of ID during pulsed measurements, is due to a negative shift of the threshold voltage, related to the ionization of Fe-related defects. Through device and epitaxy optimization, dispersion-free devices, showing a 15% transient increase of drain current were obtained.
DOI:10.1109/irps48228.2024.10529479