Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics
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| Title: | Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics |
|---|---|
| Authors: | Ruiqing Wang, Jiuren Zhou, Siying Zheng, Feng Zhu, Wenxin Sun, Haiwen Xu, Bochang Li, Yan Liu, Yue Hao, Genquan Han |
| Source: | IEEE Electron Device Letters. 46:1533-1536 |
| Publication Status: | Preprint |
| Publisher Information: | Institute of Electrical and Electronics Engineers (IEEE), 2025. |
| Publication Year: | 2025 |
| Subject Terms: | Condensed Matter - Materials Science, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Physics - Applied Physics, Applied Physics (physics.app-ph) |
| Description: | This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory. 4 pages,6 figures |
| Document Type: | Article |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2025.3584071 |
| DOI: | 10.48550/arxiv.2504.10221 |
| Access URL: | http://arxiv.org/abs/2504.10221 |
| Rights: | IEEE Copyright arXiv Non-Exclusive Distribution |
| Accession Number: | edsair.doi.dedup.....b313acd2d868af32a7267988eba481b1 |
| Database: | OpenAIRE |
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Nájsť tento článok vo Web of Science | Abstract: | This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory.<br />4 pages,6 figures |
|---|---|
| ISSN: | 15580563 07413106 |
| DOI: | 10.1109/led.2025.3584071 |