Atomic-Scale Electric Potential Landscape across Molecularly Gated Bilayer MoS2 Resolved by Photoemission
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| Název: | Atomic-Scale Electric Potential Landscape across Molecularly Gated Bilayer MoS2 Resolved by Photoemission |
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| Autoři: | Laura Scholz, Patrick Amsalem, Lennart Frohloff, Rongbin Wang, Emily Albert, Kan Tang, Stephen Barlow, Seth R. Marder, Norbert Koch |
| Zdroj: | ACS Nano. 19:32693-32704 |
| Informace o vydavateli: | American Chemical Society (ACS), 2025. |
| Rok vydání: | 2025 |
| Témata: | Stark shift, Electrical Energy, photoemission spectroscopy, 540 Chemie und zugeordnete Wissenschaften, ddc:540, Electric Fields, molecular dopants, Deposition, Layers, X-Ray Photoelectron Spectroscopy, quantum confinement, 2D semiconductors |
| Popis: | Electric gating in atomically thin field-effect devices based on transition-metal dichalcogenides has recently been employed to manipulate their excitonic states, even producing exotic phases of matter, such as an excitonic insulator or Bose–Einstein condensate. Here, we mimic the electric gating effect of a bilayer-MoS2 on graphite by charge transfer induced by the adsorption of molecular p- and n-type dopants. The electric fields produced are evaluated from the electronic energy-level realignment and Stark splitting determined by X-ray and UV photoelectron spectroscopy measurements and compare very well with literature values obtained by optical spectroscopy for similar systems. We then show that analysis of the inhomogeneous broadening and energy shifts of the quantum-well states of the valence band allows extraction of the full electric potential profile and charge-density redistribution across the entire heterojunction with atomic-scale precision, which is not accessible by other methods. |
| Druh dokumentu: | Article |
| Popis souboru: | application/pdf |
| Jazyk: | English |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.5c10363 |
| DOI: | 10.18452/34676 |
| Rights: | CC BY |
| Přístupové číslo: | edsair.doi.dedup.....a75030dc81ba3a94be4b792662665b3e |
| Databáze: | OpenAIRE |
Nájsť tento článok vo Web of Science | Abstrakt: | Electric gating in atomically thin field-effect devices based on transition-metal dichalcogenides has recently been employed to manipulate their excitonic states, even producing exotic phases of matter, such as an excitonic insulator or Bose–Einstein condensate. Here, we mimic the electric gating effect of a bilayer-MoS2 on graphite by charge transfer induced by the adsorption of molecular p- and n-type dopants. The electric fields produced are evaluated from the electronic energy-level realignment and Stark splitting determined by X-ray and UV photoelectron spectroscopy measurements and compare very well with literature values obtained by optical spectroscopy for similar systems. We then show that analysis of the inhomogeneous broadening and energy shifts of the quantum-well states of the valence band allows extraction of the full electric potential profile and charge-density redistribution across the entire heterojunction with atomic-scale precision, which is not accessible by other methods. |
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| ISSN: | 1936086X 19360851 |
| DOI: | 10.1021/acsnano.5c10363 |