SPICE Modeling of GaN MicroLEDs for Optical Communication

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Název: SPICE Modeling of GaN MicroLEDs for Optical Communication
Autoři: El Badaoui, Sultan, Le Maitre, Patrick, Cibié, Anthony, Simon, Julia, Lardeau-Falcy, Aurélien, Bilde, Jeremy, Cherruault, Louwenn, Arch, Manon, Pelissier, Michael, Le Guennec, Yannis
Přispěvatelé: Le Guennec, Yannis
Zdroj: Journal of the Society for Information Display.
Informace o vydavateli: Wiley, 2025.
Rok vydání: 2025
Témata: VLC, MicroLED, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Modelling, [SPI.TRON] Engineering Sciences [physics]/Electronics, GaN, [SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing
Popis: With the rapid expansion of data centers, there is a growing demand for high data‐rate, energy‐efficient optical links over short distances. One potential technology for this application is Gallium‐Nitride (GaN) based microlight emitting diodes (μLEDs), thanks to their compact size, high‐speed operation, and ease of manufacturability. During the development of these μLEDs, modeling plays an essential role in optimizing their performance. In this paper, we present various models to estimate both the static and dynamic performance of GaN μLEDs of various sizes. We then propose a methodology to integrate these models into a unified equivalent circuit model, enabling the simulation of the full response of the μLED. Finally, we implement this unified model in a circuit‐simulation‐compatible module and replicate the experimental setups within a simulation software to evaluate the module's ability to accurately simulate the μLED's response.
Druh dokumentu: Article
Jazyk: English
ISSN: 1938-3657
1071-0922
DOI: 10.1002/jsid.2105
Rights: CC BY
Přístupové číslo: edsair.doi.dedup.....7a1517bbdec7867cc128827c3e927a84
Databáze: OpenAIRE
Popis
Abstrakt:With the rapid expansion of data centers, there is a growing demand for high data‐rate, energy‐efficient optical links over short distances. One potential technology for this application is Gallium‐Nitride (GaN) based microlight emitting diodes (μLEDs), thanks to their compact size, high‐speed operation, and ease of manufacturability. During the development of these μLEDs, modeling plays an essential role in optimizing their performance. In this paper, we present various models to estimate both the static and dynamic performance of GaN μLEDs of various sizes. We then propose a methodology to integrate these models into a unified equivalent circuit model, enabling the simulation of the full response of the μLED. Finally, we implement this unified model in a circuit‐simulation‐compatible module and replicate the experimental setups within a simulation software to evaluate the module's ability to accurately simulate the μLED's response.
ISSN:19383657
10710922
DOI:10.1002/jsid.2105