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Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis

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Title: Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis
Authors: Florian Chabanais, Babacar Diallo, Aissatou Diop, Angélique Bousquet, Thierry Sauvage, Béatrice Plujat, Sébastien Quoizola, Audrey Soum-Glaude, Laurent Thomas, Éric Tomasella, Antoine Goullet, Mireille Richard-Plouet
Contributors: BASCHERA, Richard
Source: Thin Solid Films. 825:140725
Publisher Information: Elsevier BV, 2025.
Publication Year: 2025
Subject Terms: [CHIM.MATE] Chemical Sciences/Material chemistry, Ion beam analysis, Sputtering, Concentrated Solar Thermal, Scanning/Transmission Electron Microscopy and Ion Beam Analysis TaON, Concentrated solar technology, Tantalum oxynidride, [PHYS] Physics [physics], Plasma processes, Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray Photoelectron Spectroscopy Scanning/Transmission Electron Microscopy and Ion Beam Analysis TaON sputtering Plasma processes TEM XPS IBA Concentrated Solar Thermal, XPS, TEM, Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray Photoelectron Spectroscopy, IBA, sputtering, X-ray photo electron spectroscopy, Transmission electron microscopy
Description: TaOxNy thin films were elaborated by reactive magnetron sputtering of a Ta target in an Ar/N2/O2 plasma mixture. These layers are intended to be used as antireflective coatings in systems for concentrated solar applications (operating temperature around 500 degrees C in air). The investigation of these layers using a set of complementary techniques, including transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ion beam analysis (IBA), revealed the impact of nitrogen flux during deposition on the overall morphology and elemental composition. These characterizations also highlighted the various chemical environments constituting the thin films, ranging from oxidized environments (Ta2O5) to oxynitride and nitride environments (TaOxNy and Ta3N5). It was also shown that with a low nitrogen flow, nitrogen is present only near the substrate and is absent in the rest of the layer. The IBA technique was also carried out to quantify the concentration of light elements as a function of depth, in particular H, which is not detected by the other techniques used in this paper (XPS and TEM). It has been shown that the majority of hydrogen atoms is incorporated into thin films during deposition as hydroxyl groups or only close to the surface, depending on the samples.
Document Type: Article
File Description: application/pdf
Language: English
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2025.140725
Access URL: https://hal.science/hal-05172348v1
https://hal.science/hal-05172348v1/document
https://doi.org/10.1016/j.tsf.2025.140725
Rights: CC BY
Accession Number: edsair.doi.dedup.....2b85adddd97b8ea537114f6286b2664b
Database: OpenAIRE
Description
Abstract:TaOxNy thin films were elaborated by reactive magnetron sputtering of a Ta target in an Ar/N2/O2 plasma mixture. These layers are intended to be used as antireflective coatings in systems for concentrated solar applications (operating temperature around 500 degrees C in air). The investigation of these layers using a set of complementary techniques, including transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ion beam analysis (IBA), revealed the impact of nitrogen flux during deposition on the overall morphology and elemental composition. These characterizations also highlighted the various chemical environments constituting the thin films, ranging from oxidized environments (Ta2O5) to oxynitride and nitride environments (TaOxNy and Ta3N5). It was also shown that with a low nitrogen flow, nitrogen is present only near the substrate and is absent in the rest of the layer. The IBA technique was also carried out to quantify the concentration of light elements as a function of depth, in particular H, which is not detected by the other techniques used in this paper (XPS and TEM). It has been shown that the majority of hydrogen atoms is incorporated into thin films during deposition as hydroxyl groups or only close to the surface, depending on the samples.
ISSN:00406090
DOI:10.1016/j.tsf.2025.140725