A 5T-2MTJ STT-Assisted Spin-Orbit-Torque-Based Ternary Content Addressable Memory for Hardware Accelerators
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| Title: | A 5T-2MTJ STT-Assisted Spin-Orbit-Torque-Based Ternary Content Addressable Memory for Hardware Accelerators |
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| Authors: | Siri Narla, Piyush Kumar, Azad Naeemi |
| Source: | IEEE Transactions on Magnetics. 61:1-9 |
| Publication Status: | Preprint |
| Publisher Information: | Institute of Electrical and Electronics Engineers (IEEE), 2025. |
| Publication Year: | 2025 |
| Subject Terms: | FOS: Computer and information sciences, Emerging Technologies (cs.ET), Hardware Architecture (cs.AR), Computer Science - Emerging Technologies, Computer Science - Hardware Architecture |
| Description: | In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive study of the proposed design from the device-level to application-level. At the device-level, various write characteristics such as write error rate, time, and current have been obtained using micromagnetic simulations. The array-level search and write performance have been evaluated based on SPICE circuit simulations with layout extracted parasitics for bitcells while also accounting for the impact of interconnect parasitics at the 7nm technology node. A search error rate of 3.9x10^-11 is projected for exact search while accounting for various sources of variation in the design. In addition, the resolution of the search operation is quantified under various scenarios to understand the achievable quality of the approximate search operations. Application-level performance and accuracy of the proposed design have been evaluated and benchmarked against other state-of-the-art CAM designs in the context of a CAM-based recommendation system. 8 pages, 7 figures |
| Document Type: | Article |
| ISSN: | 1941-0069 0018-9464 |
| DOI: | 10.1109/tmag.2025.3601525 |
| DOI: | 10.48550/arxiv.2409.17863 |
| Access URL: | http://arxiv.org/abs/2409.17863 |
| Rights: | IEEE Copyright arXiv Non-Exclusive Distribution |
| Accession Number: | edsair.doi.dedup.....29c7b600d38440499e0945a39addeeea |
| Database: | OpenAIRE |
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Nájsť tento článok vo Web of Science | Abstract: | In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive study of the proposed design from the device-level to application-level. At the device-level, various write characteristics such as write error rate, time, and current have been obtained using micromagnetic simulations. The array-level search and write performance have been evaluated based on SPICE circuit simulations with layout extracted parasitics for bitcells while also accounting for the impact of interconnect parasitics at the 7nm technology node. A search error rate of 3.9x10^-11 is projected for exact search while accounting for various sources of variation in the design. In addition, the resolution of the search operation is quantified under various scenarios to understand the achievable quality of the approximate search operations. Application-level performance and accuracy of the proposed design have been evaluated and benchmarked against other state-of-the-art CAM designs in the context of a CAM-based recommendation system.<br />8 pages, 7 figures |
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| ISSN: | 19410069 00189464 |
| DOI: | 10.1109/tmag.2025.3601525 |