Zobrazit v EDS

Rethinking organic electrochemical transistor modeling: the critical role of volumetric capacitance in predictive 2D Nernst-Planck-Poisson simulations.

Uloženo v:
Podrobná bibliografie
Název: Rethinking organic electrochemical transistor modeling: the critical role of volumetric capacitance in predictive 2D Nernst-Planck-Poisson simulations.
Autoři: Sahalianov, Ihor, Mehandzhiyski, Aleksandar Y., Ersman, Peter Andersson, Zozoulenko, Igor
Zdroj: NPJ Flexible Electronics; 9/23/2025, Vol. 9 Issue 1, p1-9, 9p
Témata: NERNST-Planck equation, ELECTRIC capacity, MATHEMATICAL optimization, ORGANIC field-effect transistors, IONIC conductivity, ORGANIC conductors
Abstrakt: Organic electrochemical transistors (OECTs) combine electron/ionic transport with organic semiconductor flexibility to connect biology and electronics. As they approach industrial use, optimizing performance requires accurate modeling of their structure. This study presents a two-dimensional (2D) OECT model based on Nernst–Planck–Poisson equations that explicitly includes volumetric capacitance (CV). Unlike previous models that ignore CV, our model highlights its essential role in OECT operation, allowing us to accurately match the measured output currents of PEDOT:PSS printed OECTs. We studied how parameters like diffusion coefficients of holes and ions, fixed anion concentration, and intrinsic capacitance affect transistor performance. We analyze existing OECT models, noting that different frameworks, despite varying assumptions, can reproduce data. This question relies solely on experimental agreement for validation. We argue that models should also be evaluated on their physical principles. To assist readers, we provide COMSOL.mph files for 1D and 2D OECT models for device design and optimization. [ABSTRACT FROM AUTHOR]
Copyright of NPJ Flexible Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Databáze: Complementary Index
Popis
Abstrakt:Organic electrochemical transistors (OECTs) combine electron/ionic transport with organic semiconductor flexibility to connect biology and electronics. As they approach industrial use, optimizing performance requires accurate modeling of their structure. This study presents a two-dimensional (2D) OECT model based on Nernst–Planck–Poisson equations that explicitly includes volumetric capacitance (C<subscript>V</subscript>). Unlike previous models that ignore C<subscript>V</subscript>, our model highlights its essential role in OECT operation, allowing us to accurately match the measured output currents of PEDOT:PSS printed OECTs. We studied how parameters like diffusion coefficients of holes and ions, fixed anion concentration, and intrinsic capacitance affect transistor performance. We analyze existing OECT models, noting that different frameworks, despite varying assumptions, can reproduce data. This question relies solely on experimental agreement for validation. We argue that models should also be evaluated on their physical principles. To assist readers, we provide COMSOL.mph files for 1D and 2D OECT models for device design and optimization. [ABSTRACT FROM AUTHOR]
ISSN:23974621
DOI:10.1038/s41528-025-00482-9