Podrobná bibliografia
| Názov: |
Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition. |
| Autori: |
Hidaka, Atsuki, Tokai, Yuuta, Narita, Tomoya, Matsuura, Hideharu, Eto, Kazuma, Ji, Shiyang, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi |
| Zdroj: |
Japanese Journal of Applied Physics; Jun2025, Vol. 64 Issue 6, p1-7, 7p |
| Abstrakt: |
The temperature-dependent Hall mobilities (μ Hall(T)) of heavily Al-doped 4H-SiC, fabricated using chemical vapor deposition with Al concentrations (C Al) exceeding 1019 cm−3, are analyzed to develop p+-type substrates suitable as collectors for n-channel insulated-gate bipolar transistors. In the band conduction region, the μ Hall(T) in the valence band is governed by acoustic phonon scattering at high temperatures and ionized impurity scattering at low temperatures. The μ Hall(T) in the allowed miniband formed by the first excited states of Al acceptors falls within the lower half of the 10−1 cm2 V−1 s−1 range. In the nearest-neighbor hopping conduction region, the μ Hall(T) is around 0.1 cm2 V−1 s−1 and increases with increasing T. [ABSTRACT FROM AUTHOR] |
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| Databáza: |
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