Kwon, S., Ko, W., Byun, J., Lee, D., Lee, H., & Lee, G. (2024). The Switching Characteristics in Bilayer ZnO/HfO 2 Resistive Random-Access Memory, Depending on the Top Electrode. Electronic Materials, 5(2), 71-79. https://doi.org/10.3390/electronicmat5020006
Chicago-Zitierstil (17. Ausg.)Kwon, So-Yeon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee, und Ga-Won Lee. "The Switching Characteristics in Bilayer ZnO/HfO 2 Resistive Random-Access Memory, Depending on the Top Electrode." Electronic Materials 5, no. 2 (2024): 71-79. https://doi.org/10.3390/electronicmat5020006.
MLA-Zitierstil (9. Ausg.)Kwon, So-Yeon, et al. "The Switching Characteristics in Bilayer ZnO/HfO 2 Resistive Random-Access Memory, Depending on the Top Electrode." Electronic Materials, vol. 5, no. 2, 2024, pp. 71-79, https://doi.org/10.3390/electronicmat5020006.