Zobrazit v EDS

The Switching Characteristics in Bilayer ZnO/HfO 2 Resistive Random-Access Memory, Depending on the Top Electrode.

Uloženo v:
Podrobná bibliografie
Název: The Switching Characteristics in Bilayer ZnO/HfO 2 Resistive Random-Access Memory, Depending on the Top Electrode.
Autoři: Kwon, So-Yeon, Ko, Woon-San, Byun, Jun-Ho, Lee, Do-Yeon, Lee, Hi-Deok, Lee, Ga-Won
Zdroj: Electronic Materials; Jun2024, Vol. 5 Issue 2, p71-79, 9p
Témata: RANDOM access memory, ZINC oxide, X-ray diffraction, GIBBS' free energy, OXYGEN
Abstrakt: In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO2 exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO2. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measured. The measurement results indicate that devices with TiN/Ti TE exhibit lower set and higher reset voltage and stable bipolar switching behavior. However, a device with Pd TE demonstrates higher set and lower reset voltage. This phenomenon can be explained by the Gibbs free energy of formation (∆Gf°). Additionally, the Pd TE device shows unstable bipolar switching characteristics, where unipolar switching occurs simultaneously during the cycling test. This instability in devices with Pd TE could potentially lead to soft errors in operation. For guaranteeing stable bipolar switching, the oxygen affinity of material for TE should be considered in regards to ZnO/HfO2 bilayer RRAM. [ABSTRACT FROM AUTHOR]
Copyright of Electronic Materials is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Databáze: Complementary Index
Popis
Abstrakt:In this study, the bipolar switching behaviors in ZnO/HfO<subscript>2</subscript> bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO<subscript>2</subscript> exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO<subscript>2</subscript>. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measured. The measurement results indicate that devices with TiN/Ti TE exhibit lower set and higher reset voltage and stable bipolar switching behavior. However, a device with Pd TE demonstrates higher set and lower reset voltage. This phenomenon can be explained by the Gibbs free energy of formation (∆G<subscript>f</subscript>°). Additionally, the Pd TE device shows unstable bipolar switching characteristics, where unipolar switching occurs simultaneously during the cycling test. This instability in devices with Pd TE could potentially lead to soft errors in operation. For guaranteeing stable bipolar switching, the oxygen affinity of material for TE should be considered in regards to ZnO/HfO<subscript>2</subscript> bilayer RRAM. [ABSTRACT FROM AUTHOR]
ISSN:26733978
DOI:10.3390/electronicmat5020006