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Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells.

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Titel: Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells.
Autoren: Liliental-Weber, Z., dos Reis, Roberto
Quelle: Journal of Applied Physics; 3/7/2024, Vol. 135 Issue 9, p1-10, 10p
Schlagwörter: OPTICAL properties, QUANTUM wells, OPTICAL devices, ATOMIC force microscopy, PHOTOLUMINESCENCE, GALLIUM nitride, OPTICAL constants
Abstract: This review concentrates on the microstructure of InxGa1−xN layers and quantum wells (QWs) in relation to their optical properties. The microstructure of InxGa1−xN, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ∼10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from InxGa1−xN layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of InxGa1−xN, which are crucial alloys in the field of optoelectronics. [ABSTRACT FROM AUTHOR]
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Beschreibung
Abstract:This review concentrates on the microstructure of In<subscript>x</subscript>Ga<subscript>1−x</subscript>N layers and quantum wells (QWs) in relation to their optical properties. The microstructure of In<subscript>x</subscript>Ga<subscript>1−x</subscript>N, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ∼10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm<sup>2</sup> areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from In<subscript>x</subscript>Ga<subscript>1−x</subscript>N layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of In<subscript>x</subscript>Ga<subscript>1−x</subscript>N, which are crucial alloys in the field of optoelectronics. [ABSTRACT FROM AUTHOR]
ISSN:00218979
DOI:10.1063/5.0185713