View in EDS

Fabrication and Characterization of TaxN Thin Films Deposited by DC Magnetron Sputtering Technique: Application in Microelectronic Devices.

Saved in:
Bibliographic Details
Title: Fabrication and Characterization of TaxN Thin Films Deposited by DC Magnetron Sputtering Technique: Application in Microelectronic Devices.
Authors: Gholami, M., Khojier, K., Monsefi, Mehrdad, Borghei, Seyed Majid
Source: Brazilian Journal of Physics; Oct2022, Vol. 52 Issue 5, p1-12, 12p
Abstract: For long-term reliability, a microelectronic device needs the desired electrical behavior with high hardness, decent elasticity, fine adhesion on Si, and low interface stress. In the current research, tantalum nitride thin films were successfully deposited on Si and SiO2/Si substrates using DC reactive magnetron sputtering technique and studied as a microelectronic device. The phase and structure of the samples were tuned by the nitrogen/argon ratio ([N2/(N2 + Ar)]) and deposition power (75 and 150 W). Various structural, electrical, mechanical, and tribological characteristics of the samples were considered by X-ray diffraction technique, four-point probe instrument, indentation test, and scratch examination. The samples deposited at a nitrogen/argon ratio of 0.05 showed a Ta2N phase with hexagonal structure while those deposited at higher ratios (0.10, 0.15, and 0.20) represented a TaN phase with cubic structure. An increase in nitrogen content in the sample structure increased the resistivity values and destroyed the mechanical and tribological characteristics. The samples deposited at higher power (150 W) also showed more resistivity values and were more resistant to plastic deformation and wear than those deposited at lower power (75 W). [ABSTRACT FROM AUTHOR]
Copyright of Brazilian Journal of Physics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Complementary Index
Description
Abstract:For long-term reliability, a microelectronic device needs the desired electrical behavior with high hardness, decent elasticity, fine adhesion on Si, and low interface stress. In the current research, tantalum nitride thin films were successfully deposited on Si and SiO<subscript>2</subscript>/Si substrates using DC reactive magnetron sputtering technique and studied as a microelectronic device. The phase and structure of the samples were tuned by the nitrogen/argon ratio ([N<subscript>2</subscript>/(N<subscript>2</subscript> + Ar)]) and deposition power (75 and 150 W). Various structural, electrical, mechanical, and tribological characteristics of the samples were considered by X-ray diffraction technique, four-point probe instrument, indentation test, and scratch examination. The samples deposited at a nitrogen/argon ratio of 0.05 showed a Ta<subscript>2</subscript>N phase with hexagonal structure while those deposited at higher ratios (0.10, 0.15, and 0.20) represented a TaN phase with cubic structure. An increase in nitrogen content in the sample structure increased the resistivity values and destroyed the mechanical and tribological characteristics. The samples deposited at higher power (150 W) also showed more resistivity values and were more resistant to plastic deformation and wear than those deposited at lower power (75 W). [ABSTRACT FROM AUTHOR]
ISSN:01039733
DOI:10.1007/s13538-022-01164-x