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Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure.

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Titel: Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure.
Autoren: Li, Jing, Xi, Xin, Li, Xiaodong, Lin, Shan, Ma, Zhanhong, Xiu, Huixin, Zhao, Lixia
Quelle: Advanced Optical Materials; 4/17/2020, Vol. 8 Issue 8, p1-9, 9p
Schlagwörter: PHOTODETECTORS, NANOWIRES, NANOWIRE devices, SURFACE plasmon resonance, LATERAL loads, PLASMONICS, OPTICAL resonance, RESONANCE effect
Abstract: Composite nanostructures with plasmonic metals can introduce optical resonances and enhance optoelectronic performance significantly. In this work, novel lateral porous GaN/Ag nanowires (NWs) composite nanostructure‐based UV photodetectors were designed and fabricated, and the detectivity is up to 1015 Jones at V = 1 V with a fast response speed of ≈180 µs under UV illumination, which is more than ≈105 times faster than that of the photodetectors without Ag NWs. Combined with finite‐difference time‐domain simulations, the results show that such superior performance is mainly attributed to the surface plasmon resonance effect, which leads to a strong light trapping and efficient carriers' transport process at the lateral porous GaN/Ag NWs interfaces. This approach paves a way to realize ultra‐sensitive UV photodetectors with fast response through plasmonic metal/semiconductor nanocomposites, which are desirable for applications in optical switches, optical logical operations, and lightwave communications. [ABSTRACT FROM AUTHOR]
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Beschreibung
Abstract:Composite nanostructures with plasmonic metals can introduce optical resonances and enhance optoelectronic performance significantly. In this work, novel lateral porous GaN/Ag nanowires (NWs) composite nanostructure‐based UV photodetectors were designed and fabricated, and the detectivity is up to 1015 Jones at V = 1 V with a fast response speed of ≈180 µs under UV illumination, which is more than ≈105 times faster than that of the photodetectors without Ag NWs. Combined with finite‐difference time‐domain simulations, the results show that such superior performance is mainly attributed to the surface plasmon resonance effect, which leads to a strong light trapping and efficient carriers' transport process at the lateral porous GaN/Ag NWs interfaces. This approach paves a way to realize ultra‐sensitive UV photodetectors with fast response through plasmonic metal/semiconductor nanocomposites, which are desirable for applications in optical switches, optical logical operations, and lightwave communications. [ABSTRACT FROM AUTHOR]
ISSN:21951071
DOI:10.1002/adom.201902162